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3709ZC BV55C 8085A P3010 IR2011 160A1 PT6721C2 XFPNB
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 40 10 35 30 25 20 15 10 5 0 0 1 2 3 4 5 Vds (Volts) Fig 1: On-Region Characteristics 30 25 Vgs=1.5V 2.5V 4.5V 2V
30 Vds=5V 25 20
Id (A)
Id (A)
15 10 125C 5 25C 0 0 1 1.5 2 Vgs (Volts) Figure 2: Transfer Characteristics 0.5 2.5
1.6 Id=5A Vgs=4.5V Vgs=2.5V
Normalized On-Resistance
Vgs=1.8V
Rds(on) (m:)
1.4
20 Vgs=2.5V 15 Vgs=4.5V 10 Vgs=10V 5 0 5 10 15 20
Vgs=10V 1.2 Vgs=1.8V 1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
40 35 30 Id=5A
1.0E+01 1.0E+00 125C 1.0E-01
Rds(on) (m:)
25
Is (A)
20 15 10 5 0 0 2 4 6 25C
125C
1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Vsd (Volts) Figure 6: Body-Diode Characteristics
5 4 Vds=10V Id=8A
3000 2500
Capacitance (pF)
Vgs (Volts)
2000 1500 1000 500 0
Ciss
3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics
Coss Crss 0 5 10 15 20
Vds (Volts) Figure 8: Capacitance Characteristics
100.0
40 Rds(on) limited Tj(max)=150C Ta=25C
Id (Amps)
Power (W)
10.0
100Ps 1ms 10ms
10Ps
30
20
1.0 Tj(max)=150C Ta=25C 0.1 0.1 1
1s
0.1s
10 10s DC 10 Vds (Volts) 100 0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10
ZTja Normalized Transient Thermal Resistance
D=T on/T Tj,pk=T a+Pdm.ZTja.RTja RTja=83C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
Pd Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance


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